50v-400v 2.0a es2aa thru ES2GA web site: www.taychipst.com 1 of 2 features e-mail: sales@taychipst.com maximum ratings and electrical characteristics m e c h a n i c a l d a t a glass passivated die construction super-fast recovery time for high efficiency low forward voltage drop and high current capability surge overload rating to 50a peak ideally suited for automated assembly plastic material: ul flammability classification rating 94v-0 case: molded plastic terminals: solder plated terminal - solderable per mil-std-202, method 208 polarity: cathode band or cathode notch sma weight: 0.064 grams (approx.) smb weight: 0.093 grams (approx.) mounting position: any marking: type number ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. e s 2 c a e s 2 d a e s 2 g a ec ed eg maximum recurrent peak reverse voltage v rrm 150 200 400 v maximum rms voltage v rm s 105 140 210 v maximum dc blocking voltage v dc 150 200 400 v maximum average forward rectified current @ t a = 110 peak forward surge current 8.3ms single half-sine-wave superimposed on rated load @t j =125 m a x i m um i n s t an t a ne o us f or w a r d v o l t a ge a t 2 . 0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a = 1 25 typical reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf t y p i c al t her m al r e s i s t an c e r ja /w operating junction temperature range t j storage temperature range t stg 0 . 9 2 1.25 device marking code ea eb units - 55 ---- + 150 e s 2 a a e s 2 b a 50 100 a 5 0 i fsm i r note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. a a 10 i f ( a v ) 2 . 0 100 50 70 2 . m e a s u r e d at 1 . 0 m h z and a p p l i ed r e v e r s e v o l t a ge of 4 . 0v d c . 18 25 50 35 0 - 55 ---- + 150 35 3. thermal resistance f rom junction to ambient and junction to lead p.c.b.mounted on 0.27''x0.27''(7.0x7.0mm2) copper pad areas s u r f a ce m o unt r e c t i f i e r
ratings and characteristic curves es2aa thru ES2GA e-mail: sales@taychipst.com web site: www.taychipst.com 2 of 2 t j =25 1 2 4 6 10 20 40 60 100 200 0.1 0.2 0.4 1 2 4 10 40 100 20 amperes amperes amperes junction capacitance,pf notes:1.rise time = 7ns max.input impedance = 1m .22pf. jjjjj 2.rise time =10ns max.source impedance=50 . instantaneous forward voltage, volts instantaneous forward curren t fig.1 -- test circuit diagram and reverse recovery time characteristic average forward current set time base for 20/30 ns/cm fig.2 -- typical forward characteristic fig.3 -- forward derating curve z fig.4 -- typical junction capacitance fig.5 -- peak forward surge current ambient temperature, peak forward surge curren t number of cycles at 60hz reverse voltage,volts pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note 1) (+) 25vdc (approx) (-) - 1 . 0 a - 0 . 25a 0 + 0 . 5 a t rr 1cm t j =25 0.01 0.1 1.0 10 1 0 0 0 0.4 0.8 1.0 1.8 pulse width=300 s 1% duty cycle 2.0 0 40 50 110100 30 5 8.3ms single half sine-wave 50 10 20 .5 1 1.5 2 2.5 0 25 50 75 100 125 150 single phase half wave 60h z resistive or inductive load 0 175 50v-400v 2.0a es2aa thru ES2GA s u r f a ce m o unt r e c t i f i e r
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